dat a sh eet agr21 045ef 45 w , 2.1 10 ghz?2.1 70 ghz, n-chann e l e-mo de, la teral m o sfet introduc tion t he a g r21 045e f i s a hi gh- v olt a ge, gol d- me t ali ze d, la ter a l l y di f f u s e d m e t a l ox id e s e mi c ondu ct or ( ldmo s ) rf pow er tr ans is tor s ui t abl e f or wid eba nd co de d i v i s i o n mu lti p l e ac ce ss ( w - c dma ) , si ngl e an d mul t i c a r r i er cl as s ab wi r e les s bas e st at ion po wer amp l i f ie r app li cat i on s. f i g u r e 1. a g r 2104 5e f ( f la n g e d ) p ac kag e feature s t y pic al pe r f o r man c e for two ca r r i er 3g p p w - c dma sy s t em s. f 1 = 213 5 m h z a nd f 2 = 214 5 m h z w i th 3.8 4 mhz c ha nnel b w , ad ja- ce nt c han nel b w = 3. 84 m h z at f 1 ? 5 mhz an d f 2 + 5 m hz. t h ir d- or d e r di sto r t i on is me as ur ed ov er 3.8 4 mh z b w at f 1 ? 10 mhz a nd f 2 + 10 mhz . t y pi ca l p / a r atio of 8.5 d b at 0. 01% ( p r o bab i l i t y ) ccdf: ? o u tp ut p o wer : 10 w . ? p o we r g a i n : 14 .5 d b . ? ef fi ci en c y : 26 % . ? im 3: ? 33 d b c . ? a c pr : ?3 7 db c . ? re tur n l o s s : ?12 db . hig h - r e l i abi li ty , gol d- me t a li za tio n pr o c es s . low hot c ar r i e r inj ec t io n ( hci) i ndu ce d bi as dr i f t ov er 20 ye ar s. inte r n all y mat c he d. hig h ga in, ef fic i e nc y , and li nea r i ty . inte gr ated es d p r o t ec tio n. dev i c e c an wi ths t and a 1 0:1 vo lt ag e s t an din g wa ve r a tio ( v s w r) a t 28 vd c, 2 140 mhz , 4 5 w c onti nu- ous wav e ( c w ) ou tput powe r . lar ge si gn al i mp eda nc e p ar am ete r s av ai la bl e. t a b le 1 . t h e r m al ch a r ac t e rist ic s t a ble 2 . abs o lute m a x i mum ra tings * * s t ress e s in exces s of t he absolut e m a ximum rat i ngs can caus e perm anent dam age t o t he device. t hes e are absolut e s t re ss rat - ings onl y . f unct i ona l operat ion of t he dev ice is not im pl ied at t hes e or any ot her c ondit i ons in ex cess of t hose given i n t h e operat ional sec t ions of t he dat a s heet . e xpos ure t o absolut e max i mum rat i ngs f o r ext ended periods can a d versely af f e ct device reliabil i t y . t a ble 3 . es d r a ting * * alt hough elec t ros t a t i c d i s c harge (es d ) prot ect i on circu i t r y has been designed i n t o t h is device, pro per pr ecaut i ons m u st be t a ken t o avoid ex posure t o es d and elect rical overst res s ( eo s) during al l handli n g, assem bly , and t es t operat i on s. ager e employ s a hum an-body mod e l (hb m), a mac h ine m odel (m m) , and a cha rged-devic e m odel (cd m) quali f icat i o n requirem ent in order t o determine e s d-s us cept i bilit y limit s a nd protec tion design ev al ua t i on. e s d volt age t hres hol d s are depende nt on t he circu i t p a ramet e rs used in eac h of t he m odels, as def ined by je dec's je sd22-a 1 14b (hb m) , jes d 22-a 1 15a (mm ), and je sd22-c 101a (cdm ) s t andar ds. cau ti o n : mo s d evi ces are su s cep t i b l e to d a mag e fro m el ec- tro s t a ti c ch arg e . reaso n a b l e p r ecau ti o n s i n h a n - d l i n g an d p a c kag i n g mo s d evi c es sh o u l d b e o b served . pa ram e t e r s ym v a lu e u n i t th er ma l r e si st a n c e , j unc ti on to ca se r ? jc 1. 5 c / w pa r a m e te r s y m v a l u e u ni t d r ai n- so ur ce v o lt ag e v ds s 65 vd c g a t e -s o u rc e v o l t a g e v gs ? 0 . 5, 15 vd c t o t a l di ssi p a t i on at t c = 2 5 c p d 11 7 w der ate a bov e 25 c ? 0.67 w / c o p er ati ng ju nc tio n t e m per a- tur e t j 20 0 c s t or ag e t em p er at u r e r a ng e t stg ?6 5, 150 c ag r21 045 ef m in imu m ( v ) cla ss hbm 500 1 b mm 50 a cdm 1500 4 peak devices
45 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet AGR21045EF data sheet electrical characteristics recommended operating conditions apply unless otherwise specified: t c = 30 c. table 4. dc characteristics table 5. rf characteristics * 3gpp w-cdma, typical p/a ratio of 8.5 db at 0.01% ccdf, f1 = 2135 mhz, and f2 = 2145 mhz. v dd = 28 vdc, i dq = 400 ma, and p out = 10 w avg. parameter symbol min typ max unit off characteristics drain-source breakdown voltage (v gs = 0, i d =50a) v (br)dss 65 ? ? vdc gate-source leakage current (v gs = 5 v, v ds =0v) i gss ??2adc zero gate voltage drain leakage current (v ds = 28 v, v gs =0v) i dss ??5adc on characteristics forward transconductance (v ds = 10 v, i d = 0.5 a) g fs ? 3.2 ? s gate threshold voltage (v ds =10v, i d = 150 a) v gs(th) 2.8 3.4 4.8 vdc gate quiescent voltage (v ds = 28 v, i d = 400 ma) v gs(q) 3.0 3.8 4.6 vdc drain-source on-voltage (v gs =10v, i d = 0.5 a) v ds(on) ? 0.22 ? vdc parameter symbol min typ max unit dynamic characteristics reverse transfer capacitance (v ds =28v, v gs = 0, f = 1.0 mhz) (this part is internally matched on both the input and output.) c rss ? 1.0 ? pf functional tests (in agere systems supplied test fixture) common-source amplifier power gain* g ps 13.5 14.5 ? db drain efficiency* 24 26 ? % third-order intermodulation distortion* (im3 distortion measured over 3.84 mhz bw @ f1 ? 10 mhz and f2 + 10 mhz) im3 ? ?33 ?32 dbc adjacent channel power ratio* (acpr measured over bw of 3.84 mhz @ f1 ? 5 mhz and f2 + 5 mhz) acpr ? ?37 ?35 dbc input return loss* irl ? ?12 ?9 db power output, 1 db compression point (v dd = 28 v, f c = 2140.0 mhz) p1db 42 47 ? w output mismatch stress (v dd = 28 v, p out = 45 w (cw), i dq = 400 ma, f c = 2140.0 mhz vswr = 10:1; [all phase angles]) no degradation in output power. 75 (in supplied test fixture) = 200 a
data sheet AGR21045EF 45 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet test circuit illustrations for AGR21045EF a. schematic parts list: microstrip line: z1 0.780 in. x 0.066 in.; z2 0.225 in. x 0.090 in.; z3 0.360 in. x 0.090 in.; z4 0.320 in. x 0.520 in.; z5 0.050 in. x 0.430 in .; z6 0.335 in. x 0.330 in.; z7 0.215 in. x 0.330 in.; z8 0.450 in. x 0.066 in.; z9 0.685 in. x 0.066 in.; z10 0.050 x 0.715 in. atc ? chip capacitor: c1, c5: 8.2 pf 100b8r2jw500x; c2, c6 6.8 pf 100b6r8jw500x. kemet ? capacitor: c8 0.01 f c1206104k5rac7800; c9 0.1 f grm40x7r103k100al. vitramon ? 1206 capacitor: c3, c7: 22,000 pf. sprague ? tantalum capacitor: c4, c10: 22 f, 35 v. fair-rite ? ferrite bead: fb1 2743019447. 1206 size chip resistor: r1 12 ? . taconic ? orcer rf-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. b. component layout figure 2. AGR21045EF test circuit dut r1 c4 + c1 z2 z1 c5 z9 rf input v gg v dd rf output z6 z5 fb1 c3 c2 c8 3 1 2 pins: 1. drain 2. gate 3. source c6 c7 c10 + c9 z3 z4 z10 z8 z7
45 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet AGR21045EF data sheet typical performance characteristics figure 3. series equivalent input and output impedances mhz (f) z s ? ( complex source impedance ) z l ? (complex optimum load impedance) 2110 (f1) 3.26 ? j9.91 5.66 ? j6.84 2140 (f2) 3.20 ? j9.64 5.49 ? j6.61 2170 (f3) 3.13 ? j9.41 5.31 ? j6.40 0.1 0.1 0.1 0.2 0.2 0.3 0.3 0.4 0.4 0.5 0.5 0.6 0.6 0.7 0.7 0.8 0.8 0.9 0.9 1.0 1.0 1.2 1.2 1.4 1.4 1.6 1.6 1.8 1.8 2.0 2.0 3.0 3.0 4.0 4.0 5.0 5.0 10 10 10 20 20 20 50 50 50 0.2 0.2 0.2 0.4 0.4 0.4 0.6 0.6 0.6 0.8 0.8 0.8 1.0 1.0 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140 -150 -160 170 -170 180 90 -90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.2 0.21 0.22 0.23 0.23 0.24 0.24 0.25 0.25 0.26 0.26 0.27 0.27 0.28 0.29 0.3 0.31 0.32 0.33 0.34 0.35 0.36 0.37 0.38 0.39 0.4 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 0.48 0.49 0.49 0.0 0.0 a n g l e o f t r a n s m i s s i o n c o e f f i c i e n t i n d e g r e e s a n g l e o f r e f l e c t i o n c o e f f i c i e n t i n d e g r e e s e > w a v e l e n g t h s t o w a r d < e w a v e l e n g t h s t o w a r d l o a d < e i n d u c t c a p a c i t i v e r e a c t a n c e c o m p o n e n t ( - j x / z o ) , o r i n d u c t i v e s u s c e p t a n c e ( - j b / y o ) resistance component (r/zo), or conductance component (g/yo) z l f3 f1 z s f2 f1 z 0 = 10 ? dut z s z l input match output match drain (1) source (3) gate (2)
data sheet AGR21045EF 45 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet typical performance characteristics (continued) figure 4. two-tone power gain vs. output power and i dq figure 5. imd3 vs. output power and i dq 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 0.10 1.00 10.00 100.0 0 output power (w) pep power gain (db) s v dd = 28 vdc f1 = 2135 mhz f2 = 2145 mhz two-tone measurement i dq = 300 i dq = 350 ma i dq = 400 ma i dq = 450 ma i dq = 500 ma 10 mhz tone spacing -65.0 -60.0 -55.0 -50.0 -45.0 -40.0 -35.0 -30.0 -25.0 -20.0 0.10 1.00 10.00 100.00 output power (w) pep imd3, third order (dbc) v dd = 28 vdc f1 = 2135 mhz f2 = 2145 mhz two-tone measurement i dq = 300 ma i dq = 350 ma i dq = 400 ma i dq = 450 ma i dq = 500 ma 10 mhz tone spacing
45 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet AGR21045EF data sheet typical performance characteristics (continued) figure 6. imd vs. tone spacing figure 7. gain, efficiency, imd3, and acpr vs. output power -60.0 -55.0 -50.0 -45.0 -40.0 -35.0 -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.1 1 10 100 two-tone spacing (mhz) z imd (dbc) z im7 im5 v dd = 28 v, p out = 45 w pep, fo = 2140 mhz im3 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 20.00 0.00 5.00 10.00 15.00 20.00 25.00 output power (watts-average) z gain (db) z -55.0 -50.0 -45.0 -40.0 -35.0 -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 eff (%), imd3 (dbc), acpr (dbc) z 2 carrier w-cdma 3gpp, peak to average = 8.5 db @ 0.01% ccdf 10 mhz spacing, 3.84 mhz cbw, f c = 2140 mhz, v dd = 28 v, i dq = 400 ma drain efficiency gain imd3 acpr
data sheet AGR21045EF 45 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet typical performance characteristics (continued) figure 8. broadband performance figure 9. spectral plot 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 20.00 2100 2110 2120 2130 2140 2150 2160 2170 2180 frequency (mhz) z gain (db) z -50.0 -45.0 -40.0 -35.0 -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 50.0 eff (%), rl (db), imd3 (dbc), acpr (dbc) z 2 carrier w-cdma 3gpp, peak to average = 8.5 db @ 0.01% ccdf 10 mhz spacing, 3.84 mhz cbw, p out = 10 w, v dd = 28 v, i dq = 400 ma efficiency gain rl imd3 acpr imd3 i md3 acpr acpr center 2.140 ghz span 50 mhz -45 -40 -35 -30 -25 -20 -15 -10 -5 -0 +5 2 carrier w-cdma 3gpp peak-to-avg = 8.5 db @ 0.01% ccdf 10 mhz spacing 3.84 mhz cbw p out = 10 w v dd = 28 v i dq = 400 ma f 2 f1
45 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet AGR21045EF data sheet typical performance characteristics (continued) figure 10. am-am and am-pm characteristics 9.0 10.0 11.0 12.0 13.0 14.0 15.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 p in (dbm) z power gain (db) z -20.0 -18.0 -16.0 -14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 phase (degrees) z am to am (power gain [db]) a m to pm (phase [d egrees]) v dd = 28 vdc f o = 2140 mhz i dq = 400 ma cw input
data sheet AGR21045EF 45 w , 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet package dimensions all dimensions are in inches. tolerances are 0.005 in. unless specified. AGR21045EF label notes: m before the part number denotes model program. x bef ore the part number denot es engineering prototype. the last two letters of the part number denote wafer technology and package type. yywwll is the date code including place of ma nufacture: year year work week (yyww), ll = location (al = allentown, pa; t = thai land). xxxxx = five-digit wafer lot number. zzzzzzz = seven-digit assembly lot number on production parts. zzzzzzzzzzzz = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. agr21045f yywwll zzzzzzz 1 2 3 1 3 2 pins: 1. drain 2. gate 3. source peak devices agr21045xf yywwll xxxxx zzzzzzz
|
